Equilibrium concentration of impurity-vacancy complexes

Equilibrium concentration of impurity-vacancy complexes

Identification of Vacancy-Impurity Complexes in Highly n-Type Si

We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V -P and V -As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 10...

Formation of vacancy-impurity complexes by kinetic processes in highly As-doped Si.

Positron annihilation experiments have been applied to verify the formation mechanism of electrically inactive vacancy-impurity clusters in highly n-type Si. We show that the migration of V-As pairs at 450 K leads to the formation of V-As2 complexes, which in turn convert to stable V-As3 defects at 700 K. These processes manifest the formation of V-As3 as the dominant vacancy-impurity cluster i...

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy.

Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1-2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400-500 K convert the defects to larger co...

Impurity free vacancy disordering of InGaAs quantum dots